Synthesis and Real Structure Group

FOR 2093 - Memristive Devices for Neuronal Systems

Ole Gronenberg


The analysis of the nanostrucuture is one key towards fundamental understanding of function and knowledge-driven improvement of memristive devices. My focus in the research unit 2093 is on the chemical and structural investigations of the nanoscale structures. These two, intrinsically determine device function as well as memristive switching mechanisms and fatigue. The diverse designs of memristive devices relevant to the research unit require the use of well-chosen and complementary techniques of transmission electron microscopy including high resolution imaging, electron diffraction, X-ray- and electron spectroscopy. Sample extraction and thinning must first be developed towards artefact-free preparation for each of the specific designs. This creates a synergistic link to device fabrication and the correlation of atomic structure and electrical properties which can be further verified by accompanying device simulations. The analyses cover a wide range of length scales with structure sizes from a few angstroms (e.g. electrically charged defects) to nanometers (e.g. barrier layers) and micrometers (e.g. sections through entire devices and metal oxide networks). Besides dedicated ex situ analyses, horizontal devices on TEM-sample-grids are fabricated for in situ observations which may enable recording the structural changes upon memristive switching live and in real time.